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Author Tao, Jing.

Title Nanowires for 3D silicon interconnection - low temperature compliant nanowire-polymer film for z-axis interconnect / Jing Tao.

Copyright date 2016.
LOCATION CALL # STATUS
 Special Collections on Request  DP2016 TAO    NOT AVAILABLE
Dissertation Thesis (Ph.D.) --NUI, 2016 at Department of Electrical and Electronic Engineering, UCC.
Summary Semiconductor chip packaging has evolved from single chip packaging to 3D heterogeneous system integration using multichip stacking in a single module. One of the key challenges in 3D integration is the high density interconnects that need to be formed between the chips with through-silicon-vias (TSVs) and inter-chip interconnects. Anisotropic Conductive Film (ACF) technology is one of the low-temperature, fine-pitch interconnect method, which has been considered as a potential replacement for solder interconnects in line with continuous scaling of the interconnects in the IC industry. However, the conventional ACF materials are facing challenges to accommodate the reduced pad and pitch size due to the micro-size particles and the particle agglomeration issue. A new interconnect material - Nanowire Anisotropic Conductive Film (NW-ACF), composed of high density copper nanowires of ~ 200 nm diameter and 10-30 µm length that are vertically distributed in a polymeric template, is developed in this work to tackle the constrains of the conventional ACFs and serves as an inter-chip interconnect solution for potential three-dimensional (3D) applications.
Add Form Also available online via CORA
Subject Nanowires.
Collection CORA
Theses Ph.D.
Theses Electrical and Electronic Engineering Department
Theses Tyndall National Institute
Description 187 pages ; 30 cm.
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